Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications
作者： F.A. Garcés , N. Budini , J.A. Schmidt , R.D. Arce
DOI: 10.1016/J.TSF.2015.09.053
关键词: Sol-gel 、 Mosaicity 、 Dopant 、 Diffraction 、 Photovoltaics 、 Doping 、 Crystallinity 、 Optoelectronics 、 Materials science 、 Thin film
摘要: Abstract Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent conducting layers with interesting applications in optoelectronics photovoltaics. Optimization parameters such as dopant type concentration, deposition time substrate temperature is important optimal properties. In this work we present a study about the induced effects on optical electrical properties thin films. These were deposited by spray pyrolysis suitable Zn precursor, obtained through sol–gel method. The has direct incidence internal stress crystal structure, generating defects that may affect transparency transport into layers. We performed mosaicity measurements, X-ray diffraction, used it tool to get an insight structural characteristics homogeneity Also, technique, analyzed thickness doping crystallinity carrier
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