Semiconductor laser element

作者: Yuichi Inoue , Hideki Goto , Kenji Shimoyama , Itaru Sakamoto

DOI:

关键词: OptoelectronicsCladding (fiber optics)Refractive indexSemiconductorLaserActive layerLayer (electronics)Reverse orderMaterials science

摘要: Disclosed herein is a semiconductor laser element comprising first cladding layer, an optical guiding active layer and second disposed in this order or reverse on substrate, refractive index of the being larger than both indexes layers, smaller that but burying having at least one layers side faces other laser-emitting layer.

参考文章(9)
Tsukuru Ohtoshi, Toshihiro Kawano, Yoshimitsu Sasaki, Takashi Kajimura, Naoki Chinone, Michiharu Nakamura, High‐power visible GaAlAs lasers with self‐aligned strip buried heterostructure Journal of Applied Physics. ,vol. 56, pp. 2491- 2496 ,(1984) , 10.1063/1.334311
K. Shimoyama, Y. Inoue, K. Fujii, H. Gotoh, Novel Selective Area Growth of AIGaAs and AIAs with HCI Gas by MOVPE Journal of Crystal Growth. ,vol. 124, pp. 235- 242 ,(1992) , 10.1016/0022-0248(92)90465-U
Donald R. Scifres, William Streifer, Robert D. Burnham, Heterostructure lasers with combination active strip and passive waveguide strip ,(1980)
Seiichi Miyazawa, Hidetoshi Nojiri, Isao Hakamada, Yoshioki Hajimoto, Semiconductor device and its fabrication ,(1984)
Kazuhiro Eguchi, Masahisa Funamizu, Yasuo Ohba, Mitsuhiro Kushibe, Impurity-doped semiconductor laser device for single wavelength oscillation ,(1989)
Peter Dr. Roentgen, Gian-Luca Bona, Peter Dr. Unger, Wilhelm Heuberger, Semiconductor device comprising a layered structure grown on a structured substrate ,(1991)
Nagano Munehiko, Ooshima Kazuyoshi, SEMICONDUCTOR LASER DEVICE ,(1980)
Oshiba Saeko, Kawai Yoshio, Kobayashi Masao, Matoba Akihiro, SEMICONDUCTOR LASER DEVICE ,(1982)