Ferromagnetism and magnetoresistance of Co–ZnO inhomogeneous magnetic semiconductors
作者： Shi-shen Yan , C. Ren , X. Wang , Y. Xin , Z. X. Zhou
DOI: 10.1063/1.1690881
关键词: Giant magnetoresistance 、 Magnetoresistance 、 Thin film 、 Magnetization 、 Ferromagnetism 、 Condensed matter physics 、 Sputtering 、 Materials science 、 Magnetic semiconductor 、 Colossal magnetoresistance
摘要: Co–ZnO inhomogeneous magnetic semiconductor thin films were synthesized on the subnanometer scale by sputtering. Room temperature ferromagnetism with high magnetization was found. Large negative magnetoresistance of 11% found at room temperature, and its value increased a decrease in up to 36% 4.8 K. The mechanism for large is discussed.
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