Ferromagnetism in new diluted magnetic semiconductor Bi2−xFexTe3
作者： V.A. Kulbachinskii , A.Yu. Kaminskii , K. Kindo , Y. Narumi , K. Suga
DOI: 10.1016/S0921-4526(01)00975-9
关键词: Magnetization 、 Materials science 、 Doping 、 Magnetic semiconductor 、 Magnetic susceptibility 、 Electrical resistivity and conductivity 、 Seebeck coefficient 、 Ferromagnetism 、 Condensed matter physics 、 De Haas–van Alphen effect
摘要: Abstract Single crystals of the new diluted magnetic semiconductors p-Bi2−xFexTe3 (0⩽x⩽0.08) and n-Bi2−xFexSe3 (0⩽x⩽0.04) have been produced. Magnetization susceptibility measured in temperature interval 2–300 K. The ferromagnetic phase was found at a Tc which increases with Fe content x up to Tc=12 K for x=0.08, while hole concentration decreases, i.e., iron atoms exhibit donor properties. easy-axis magnetization is parallel C3 crystallographic axis. In n-type samples, Bi2−xFexSe3 transition not found. de Haas–van Alphen effect clearly observed frequency oscillation decreasing doping. We also jump resistivity T=Tc. Seebeck coefficient α has room temperature. With an increase atoms, value from α=215 μV/K host material p-Bi2Te3 260 μV/K Bi1.92Fe0.08Te3 maximal content.
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