作者: A. Mozer , S. Hausser , M. Pilkuhn
关键词: Quantum efficiency 、 Optoelectronics 、 Semiconductor laser theory 、 Charge carrier 、 Auger effect 、 Absorption (electromagnetic radiation) 、 Laser 、 Spontaneous emission 、 Atomic physics 、 Free carrier absorption 、 Materials science
摘要: An excellent quantitative description of the temperature dependence laser threshold current density and relevant T o value GaInAsP/InP 1.3 μm lasers has been reached by independent measurements recombination coefficients free carrier absorption losses. The for radiative band-to-band transition, nonradiative Auger recombination, extrinsic were determined experimentally, together with absorption, especially contribution intervalence band absorption. evaluation shows that losses play dominant role in values around room temperature, followed a smaller due to Furthermore, combined pressure experiments quantum efficiency permit detailed study various loss contributions demonstrate influence split-off valence band.