Quantitative evaluation of gain and losses in quaternary lasers

作者: A. Mozer , S. Hausser , M. Pilkuhn

DOI: 10.1109/JQE.1985.1072716

关键词: Quantum efficiencyOptoelectronicsSemiconductor laser theoryCharge carrierAuger effectAbsorption (electromagnetic radiation)LaserSpontaneous emissionAtomic physicsFree carrier absorptionMaterials science

摘要: An excellent quantitative description of the temperature dependence laser threshold current density and relevant T o value GaInAsP/InP 1.3 μm lasers has been reached by independent measurements recombination coefficients free carrier absorption losses. The for radiative band-to-band transition, nonradiative Auger recombination, extrinsic were determined experimentally, together with absorption, especially contribution intervalence band absorption. evaluation shows that losses play dominant role in values around room temperature, followed a smaller due to Furthermore, combined pressure experiments quantum efficiency permit detailed study various loss contributions demonstrate influence split-off valence band.

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