Interface, lattice strain and dislocation density of SiCp/Al composite consolidated by equal channel angular pressing and torsion

作者: Chen-hao QIAN , Ping LI , Ke-min XUE

DOI: 10.1016/S1003-6326(15)63779-7

关键词: Amorphous solidEnergy-dispersive X-ray spectroscopyBragg's lawHigh-resolution transmission electron microscopySelected area diffractionTransmission electron microscopyComposite materialCrystallographyPowder mixtureSevere plastic deformationMaterials science

摘要: Abstract Powder mixture of pure Al and oxidized SiC was consolidated into 10% (mass fraction) p /Al composites at 523 K by equal channel angular pressing torsion (ECAP-T). The interfacial bonding the characterized transmission electron microscopy (TEM) high resolution (HRTEM). selected area diffraction (SAED) for interface investigated. elements were scanned energy dispersive spectroscopy (EDS) EDS mapping also obtained. X-ray (XRD) analysis carried out fabricated 1 pass, 2 passes 4 ECAP-T. According to XRD analysis, influences ECAP-T pass on Bragg angle interplanar spacing crystalline planes studied. results show that after ECAP-T, between within is a belt amorphous SiO containing trace Al, Si C which diffused from matrix reinforcement. With growing decreases increases planes, due accumulated lattice strain. increasing strain grains boosts density dislocation grains.

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