作者: Konstantinos Zekentes , I. Zergioti , A. Klini , George Konstantinidis
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.527-529.1119
关键词: Optics 、 Laser 、 Silicon carbide 、 Tapering 、 Nanoparticle 、 Materials science 、 Optoelectronics 、 Excimer laser 、 Laser micromachining 、 Laser ablation 、 Pulse duration
摘要: A 248 nm (KrF) excimer laser with a repetition rate of 10 Hz, pulse duration 30 ns and beam energy up to 450 mJ was employed form vias in 4H-SiC substrates Lely platelets. SEM micrographs have been used evaluate etched material quality as well etch rate. The area surrounding the via-holes is covered by nanoparticles, which are debris from ablation removed chemical cleaning agitation. etch-rate exhibits perfect linear behaviour versus number pulses showing possibility an all-laser via-hole formation. slight tapering along via-holes, useful for subsequent metallization process also observed. Finally, defective,15 μm wide, zone formed nearby sidewalls.