Via Hole Formation in Silicon Carbide by Laser Micromachining

作者: Konstantinos Zekentes , I. Zergioti , A. Klini , George Konstantinidis

DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.527-529.1119

关键词: OpticsLaserSilicon carbideTaperingNanoparticleMaterials scienceOptoelectronicsExcimer laserLaser micromachiningLaser ablationPulse duration

摘要: A 248 nm (KrF) excimer laser with a repetition rate of 10 Hz, pulse duration 30 ns and beam energy up to 450 mJ was employed form vias in 4H-SiC substrates Lely platelets. SEM micrographs have been used evaluate etched material quality as well etch rate. The area surrounding the via-holes is covered by nanoparticles, which are debris from ablation removed chemical cleaning agitation. etch-rate exhibits perfect linear behaviour versus number pulses showing possibility an all-laser via-hole formation. slight tapering along via-holes, useful for subsequent metallization process also observed. Finally, defective,15 μm wide, zone formed nearby sidewalls.

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