Semiconductor integrated circuit device having trench-type photodiode
作者： Jun Osanai
DOI:
关键词: Materials science 、 Transistor 、 Layer (electronics) 、 Photodiode 、 Semiconductor 、 Trench 、 Optoelectronics 、 Integrated circuit 、 Diffusion layer 、 Silicon on insulator
摘要: A semiconductor integrated circuit device has a substrate having an SOI region and bulk region. buried insulating layer is formed only in the of substrate. diode-type photosensor comprised trench diffusion disposed over side surfaces lower surface trench. MOS transistor for processing signal from photosensor.
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