Effects of single-pulse Al 2 O 3 insertion in TiO 2 oxide memristors by low temperature ALD
作者： C. Giovinazzo , C. Ricciardi , C. F. Pirri , A. Chiolerio , S. Porro
DOI: 10.1007/S00339-018-2112-5
关键词: Memristor 、 Doping 、 Thin film 、 Voltage 、 Oxide 、 Optoelectronics 、 Fabrication 、 Metal 、 Atomic layer deposition 、 Materials science
摘要: … resistive switching behavior of TiO 2 thin films. The doping process via ALD consisted in the … 2 O 3 single layers were periodically inserted into TiO 2 films during ALD. The presence of Al …
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