Dynamics of surface electron trapping of a GaN-based transistors revealed by spatiotemporally resolved x-ray spectroscopy

摘要: Gallium nitride (GaN)-based transistors are promising for realizing ultralow latency of wireless information communications that indispensable smart societies. However, surface states have slow time constants (de)trapping electrons and delay electrical signal responses the transistors, which prevent latency. To clarify mechanism electron trapping (SET) GaN-based varies spatiotemporally, we studied dynamics SET by using spatiotemporally resolved x-ray spectroscopy. We directly observed neutralization donor-like occurs only near gate edge in drain side just after switching off bias. found large local electric field formed bias application induces site- time-specificity SET, leads to delayed responses. Our proposed will be useful optimizing transistor structure achieve