XPS Study on the Oxidation of InSe
作者： Izumi Miyake , Toyokazu Tanpo , Chiei Tatsuyama
DOI: 10.1143/JJAP.23.172
关键词: Photochemistry 、 Oxygen 、 X-ray photoelectron spectroscopy 、 Photovoltaic effect 、 Heterojunction 、 Semiconductor 、 Visible spectrum 、 Chemistry 、 Ion sputtering 、 Thermal oxidation
摘要: … O ls spectrum of RT-InSe (d)consists of more oxidation states than that of p-InSe. The In, O, component (a Gaussian at 529.8 eV with FWHM 1.6 eV… ) of the O ls spectrum between p-In O, …
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jsap.jp参考文章(9)
Hiroaki Iwakuro, Chiei Tatsuyama, Shoji Ichimura, XPS and AES Studies on the Oxidation of Layered Semiconductor GaSe Japanese Journal of Applied Physics. ,vol. 21, pp. 94- 99 ,(1982) , 10.1143/JJAP.21.94
Shigeru Shigetomi, Tetsuo Ikari, Yutaka Koga, Shigenobu Shigetomi, Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals Japanese Journal of Applied Physics. ,vol. 20, pp. L343- L346 ,(1981) , 10.1143/JJAP.20.L343
W. Ranke, K. Jacobi, Adsorption states and Ga depletion during oxygen adsorption on clean polar GaAs surfaces Surface Science. ,vol. 81, pp. 504- 518 ,(1979) , 10.1016/0039-6028(79)90116-X
Hiroshi Iwasaki, Yusuke Mizokawa, Ryusuke Nishitani, Shogo Nakamura, X-Ray Photoemission Study of the Oxidation Process at Cleaved (110) Surfaces of GaAs, GaP and InSb Japanese Journal of Applied Physics. ,vol. 17, pp. 1925- 1933 ,(1978) , 10.1143/JJAP.17.1925
K.L. Chopra, S. Major, D.K. Pandya, Transparent conductors—A status review Thin Solid Films. ,vol. 102, pp. 1- 46 ,(1983) , 10.1016/0040-6090(83)90256-0
A. Chevy, A. Kuhn, M.-S. Martin, Large InSe monocrystals grown from a non-stoichiometric melt Journal of Crystal Growth. ,vol. 38, pp. 118- 122 ,(1977) , 10.1016/0022-0248(77)90381-5
C. R. Brundle, The application of electron spectroscopy to surface studies Journal of Vacuum Science and Technology. ,vol. 11, pp. 212- 224 ,(1974) , 10.1116/1.1318572
J. C. Phillips, Walter A. Harrison, Bonds and Bands in Semiconductors ,(1973)
E. Doni, R. Girlanda, V. Grasso, A. Balzarotti, M. Piacentini, Electronic properties of the III VI layer compounds GaS, GaSe and InSe. I: Band structure Il Nuovo Cimento B. ,vol. 51, pp. 154- 180 ,(1979) , 10.1007/BF02743704