Photoconductive member with alpha -Si(C) barrier layer
作者： Shirai Shigeru , Inoue Eiichi , Shimizu Isamu
DOI:
关键词: Photoconductivity 、 Halogen 、 Barrier layer 、 Intermediate layer 、 Hydrogen 、 Crystallography 、 Amorphous solid 、 Materials science 、 Silicon
摘要: A photoconductive member comprise a support, layer constituted of an amorphous material containing silicon atoms as matrix and hydrogen or halogen atoms, intermediate provided between them, said having function to bar penetration carriers from the side support into permit passage photocarriers generated in by projection electromagnetic waves movement toward being carbon constituents. constituent, layer, is characterized that nitrogen constitution elements. element.
lens.org 参考文章(10)
Shigeru Shirai, Eiichi Inoue, Isamu Shimizu, Photoconductive member having barrier and depletion layers ,(1981)
Shigeru Shirai, Junichiro Kanbe, Tadaji Fukuda, Layered photoconductive member having barrier of silicon and halogen ,(1981)
Kiichi F. Komatsubara, Yoshifumi Katayama, Toshikazu Shimada, Light-sensitive film ,(1979)
Arun Madan, Stanford R. Ovshinsky, Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process ,(1978)
Karl Kempter, Printing drum for an electrostatic imaging process with a doped amorphous silicon layer ,(1978)
Stanford R. Ovshinsky, Arun Madan, Amorphous semiconductors equivalent to crystalline semiconductors ,(1979)
David E. Carlson, Semiconductor device having a body of amorphous silicon and method of making the same ,(1980)
Vikram L. Dalal, Multiple gap photovoltaic device ,(1980)
Teruo Misumi, Yutaka Hirai, Toshiyuki Komatsu, Tadaji Fukuda, Katsumi Nakagawa, Electrophotographic photosensitive member and process for production thereof ,(1978)
Sunners Brian, Narken Bernt, Maissel Leon I, Imaging method using photoconductive element having a protective coating ,(1968)