作者: L. Chang , S. Z. Zhao , K. J. Yang , J. Zhao , L. H. Zheng
关键词: Laser 、 Mode-locking 、 Pulsed laser deposition 、 Electro-optic modulator 、 Optoelectronics 、 Optics 、 Diode 、 Materials science 、 Pulse (physics) 、 Envelope (waves) 、 Pulse duration
摘要: By using the dual-loss modulated technology, i.e., adopting electro-optic (EO) modulator and transmission semiconductor saturable absorber (transmission SSA) simultaneously, a diode-pumped doubly Q-switched mode-locked (QML) Nd:Lu3Al5O12 (Nd:LuAG) laser at 1.06 μm has been realized for first time. In comparison to singly passively QML Nd:LuAG with SSA, can generate more stable pulses shorter pulse widths higher peak powers. It also be observed that duration of envelope decreases increasing pump power. When power exceeds 6.52 W time, there is only one underneath this laser. As result, subnanosecond 1 kHz repetition rate EO high stability generated. The shortest generated about 718 ps highest reaches as 502 kW. experimental results show an excellent alternative crystal pulsed generation.