Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts

摘要: We have fabricated field-effect transistors (FETs) based on single SnO2 and ZnO nanobelts of thicknesses between 10 30 nm. Switching ratios as large 6 orders magnitude conductivities high 15 (Ω cm)-1 are observed. Annealing nanobelt FETs in an oxygen-deficient atmosphere produces a negative shift gate threshold voltage, indicating doping by the generation surface oxygen vacancies. This treatment provides effective way tuning electrical performance devices. The ability to act gas sensors is also demonstrated. with lengths about 500 nm or less show anomalous behavior where conductance cannot be modulated gate. sensitive ultraviolet light. Both photogeneration electron−hole pairs UV induced desorption contribute conductivity.