Spectromicroscopy study of lateral band bending of the Ge-GaSe heterostructure
作者： I. Vobornik , H. Berger , G. Margaritondo , A. Kolmakov , J. Almeida
DOI:
关键词: Heterojunction 、 Line (formation) 、 Semiconductor 、 Microscopy 、 Synchrotron radiation 、 Band bending 、 Optoelectronics 、 Optics 、 Beam (structure) 、 Debye length 、 Materials science
摘要: We report a study of the lateral band bending at Ge-GaSe interface. Spectromicroscopy measurements with synchrotron radiation were performed ESCA microscopy line ELETTRA in Ge patterned films on GaSe substrates. Preliminary results bending, chemical reactions and beam stimulated surface migration are presented. These studies allowed us to seek microscopical equivalent semiconductor Debye length probe capabilities scanning-focused spectromicroscopical systems.
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