Chemically-sensitive field effect transistor

作者: Mitchell Lerner , Paul Hoffman , Pieter Van Rooyen

DOI:

关键词: OptoelectronicsHeterostructure-emitter bipolar transistorThin-film transistorOxide thin-film transistorThreshold voltageMaterials scienceDrain-induced barrier loweringGate oxideOrganic field-effect transistorField-effect transistor

摘要: A chemically-sensitive field effect transistor (32) is disclosed herein. The comprises a CMOS structure comprising conductive source (34) and drain (34), channel (33) an analyte-sensitive dielectric layer (35). extends from the to (34). composed of one-dimensional material or two-dimensional material. (35) disposed over (33). An I-V curve I-Vg shifted in response chemical reaction occurring on near (32).

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