作者: Mitchell Lerner , Paul Hoffman , Pieter Van Rooyen
DOI:
关键词: Optoelectronics 、 Heterostructure-emitter bipolar transistor 、 Thin-film transistor 、 Oxide thin-film transistor 、 Threshold voltage 、 Materials science 、 Drain-induced barrier lowering 、 Gate oxide 、 Organic field-effect transistor 、 Field-effect transistor
摘要: A chemically-sensitive field effect transistor (32) is disclosed herein. The comprises a CMOS structure comprising conductive source (34) and drain (34), channel (33) an analyte-sensitive dielectric layer (35). extends from the to (34). composed of one-dimensional material or two-dimensional material. (35) disposed over (33). An I-V curve I-Vg shifted in response chemical reaction occurring on near (32).