作者: Yi-Jung Liu , Tsung-Yuan Tsai , Chih-Hung Yen , Li-Yang Chen , Tsung-Han Tsai
DOI: 10.1364/OE.18.002729
关键词: Optoelectronics 、 Diode 、 Indium 、 Light-emitting diode 、 Vicinal 、 Quantum efficiency 、 Optics 、 Sapphire 、 Misorientation 、 Materials science 、 Quantum dot
摘要: GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. Based the material quality electrical properties, LED with a 0.2 degrees tilt substrate (device A) exhibits lowest defect density high performance, while 1.0 D) highest one. At 2 mA, extremely enhanced output power of 23.3% indicates reduction defect-related nonradiative recombination centers in active layers for device A. 60 improved value is up to 45.7%. This primarily caused by formation indium quantum dots MQW which provides an increased efficiency.