Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates

作者: Yi-Jung Liu , Tsung-Yuan Tsai , Chih-Hung Yen , Li-Yang Chen , Tsung-Han Tsai

DOI: 10.1364/OE.18.002729

关键词: OptoelectronicsDiodeIndiumLight-emitting diodeVicinalQuantum efficiencyOpticsSapphireMisorientationMaterials scienceQuantum dot

摘要: GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. Based the material quality electrical properties, LED with a 0.2 degrees tilt substrate (device A) exhibits lowest defect density high performance, while 1.0 D) highest one. At 2 mA, extremely enhanced output power of 23.3% indicates reduction defect-related nonradiative recombination centers in active layers for device A. 60 improved value is up to 45.7%. This primarily caused by formation indium quantum dots MQW which provides an increased efficiency.

参考文章(25)
X.Q. Shen, M. Shimizu, T. Yamamoto, Y. Honda, H. Okumura, Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0 0 0 1) substrates by RF-MBE Journal of Crystal Growth. ,vol. 278, pp. 378- 382 ,(2005) , 10.1016/J.JCRYSGRO.2005.01.036
ML Lucia, JL Hernandez-Rojas, C Leon, IJEJOP Mártil, None, Capacitance measurements of p-n junctions: depletion layer and diffusion capacitance contributions European Journal of Physics. ,vol. 14, pp. 86- 89 ,(1993) , 10.1088/0143-0807/14/2/009
Nie-Chuan Chen, Chih-Min Lin, Yen-Kai Yang, Chi Shen, Tong-Wen Wang, Meng-Chyi Wu, Measurement of Junction Temperature in a Nitride Light-Emitting Diode Japanese Journal of Applied Physics. ,vol. 47, pp. 8779- 8782 ,(2008) , 10.1143/JJAP.47.8779
A. Nakamura, N. Yanagita, T. Murata, K. Hoshino, K. Tadatomo, Effects of sapphire substrate misorientation on the GaN‐based light emitting diode grown by metalorganic vapour phase epitaxy Physica Status Solidi (c). ,vol. 5, pp. 2007- 2009 ,(2008) , 10.1002/PSSC.200778681
T. Lei, K. F. Ludwig, T. D. Moustakas, Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates Journal of Applied Physics. ,vol. 74, pp. 4430- 4437 ,(1993) , 10.1063/1.354414
Di Zhu, Jiuru Xu, Ahmed N. Noemaun, Jong Kyu Kim, E. Fred Schubert, Mary H. Crawford, Daniel D. Koleske, The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes Applied Physics Letters. ,vol. 94, pp. 081113- ,(2009) , 10.1063/1.3089687
C.Y. Zhu, L.F. Feng, C.D. Wang, H.X. Cong, G.Y. Zhang, Z.J. Yang, Z.Z. Chen, Negative capacitance in light-emitting devices Solid-state Electronics. ,vol. 53, pp. 324- 328 ,(2009) , 10.1016/J.SSE.2009.01.002
X.A Cao, J.A Teetsov, F Shahedipour-Sandvik, S.D Arthur, Microstructural origin of leakage current in GaN/InGaN light-emitting diodes Journal of Crystal Growth. ,vol. 264, pp. 172- 177 ,(2004) , 10.1016/J.JCRYSGRO.2004.01.031
R.W. Chuang, C.L. Yu, S.J. Chang, P.C. Chang, J.C. Lin, T.M. Kuan, Crystal growth and characterization of AlGaN/GaN heterostructures prepared on vicinal-cut sapphire (0 0 0 1) substrates Journal of Crystal Growth. ,vol. 308, pp. 252- 257 ,(2007) , 10.1016/J.JCRYSGRO.2007.08.015
Seong-Woo Kim, Hideo Aida, Toshimasa Suzuki, The effect of a slight mis-orientation angle of c-plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin films Physica Status Solidi (c). ,vol. 1, pp. 2483- 2486 ,(2004) , 10.1002/PSSC.200405028