Physically based 2D compact model for power bipolar devices

作者： PM Igic , MS Towers , PA Mawby , None

关键词: Ambipolar diffusion equation 、 Insulated-gate bipolar transistor 、 Trench igbt 、 Engineering 、 Electrical engineering 、 Power (physics) 、 Boundary value problem 、 Transistor 、 Electronic engineering

摘要: The two-dimensional (2D) physical compact model for advanced power bipolar devices such as injection enhanced gate transistor (IEGT) or Trench IGBT is presented in this paper. In order to the complex 2D nature of these ambipolar diffusion equation has been solved simultaneously different boundary conditions associated with areas device. IEGT incorporated into SABER simulator and tested standard double-pulse switching test circuit. established a 4500V-1500A flat pack TOSHIBA IEGT. Copyright © 2004 John Wiley & Sons, Ltd.