Phase transformation and modifications in high-k ZrO2 nanocrystalline thin films by low energy Kr5+ ion beam irradiation

摘要: Abstract In present communication, zirconium oxide (ZrO2) thin films of thickness (155 nm) were grown by using RF sputtering technique. To address and systematically understand the effects low energy (800 keV) irradiation, high-k ZrO2 irradiated at room temperature Kr ions with a range fluence 1E15 to 1E17 ions. cm−2. The polymorphous zirconia pristine characterized through X-ray diffraction (XRD) technique which confirms coexistence monoclinic tetragonal phases. Monoclinic structural phase transformation was observed for Kr5+ samples 5E15, 1E16, All UV–Vis spectroscopy study mechanism variation in optical band gap (4.42–4.52 eV), Urbach (402–449 meV) refractive index (1.518–1.523) increasing ion fluence. Photoluminescence (PL) done record significant PL broad prominent emission peaks 350 nm 430 nm peak intensity these significantly varies due annihilation primary defects or generation new centres influence irradiation. determine grain size (50–85 nm) RMS surface roughness (0.54–1.04 nm), sample atomic force microscopy (AFM). A complete evolution analyzed determining power spectral density (PSD). Further component 0.4–1.7 calculated slope tail PSD. FTIR spectra recorded 1250–3200 cm−1. Rutherford backscattering spectrometry (RBS) carried out channeling condition experimental results simulated evaluate elemental composition Zr O (⁓1:2) film samples. changes chemical binding 3d 1s region before after irradiation investigated x-ray photoelectron (XPS).