High‐quality amorphous silicon germanium produced by catalytic chemical vapor deposition
作者： Hideki Matsumura
DOI: 10.1063/1.98871
关键词: Chemical vapor deposition 、 Thin film 、 Photoconductivity 、 Impurity 、 Tungsten 、 Chemistry 、 Band gap 、 Silicon 、 Germanium 、 Inorganic chemistry
摘要: … with Ii heated tungsten catalyzec Photoconductive properties of CTL CVD a-SiGe:H are … Development of high-quality amorphous silicon germanium (a-SiGe) is required for many …
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sci-hub.se 参考文章(4)
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