作者: C. Gosset , K. Merghem , A. Martinez , G. Moreau , G. Patriarche
DOI: 10.1049/EL:20063868
关键词: Laser 、 Laser linewidth 、 Semiconductor laser theory 、 Pulse compression 、 Optics 、 Semiconductor 、 Nonlinear optics 、 Materials science 、 Optoelectronics 、 Fabry–Pérot interferometer 、 Diode
摘要: Passive modelocking in one-section monolithic semiconductor laser diodes based on a quantum dash active layer at very high repetition rate (>40 GHz), the 1.5 µm window, is demonstrated. 800 fs pulse generation, without any compression scheme, 134 GHz, reported. A 50 kHz linewidth of radiofrequency (RF) spectrum 42 GHz also demonstrated, lowest value reported for passively modelocked laser.