Filling-Factor-Dependent Cyclotron Resonance in GaInAs/AlInAs Modulation-Doped Single Quantum Wells

作者: DS Jiang , M Goiran , J Leotin , S Askenazy , YH Zhang

DOI: 10.1002/PSSB.2221790111

关键词: ElectronIonized impurity scatteringCyclotron resonanceEffective mass (solid-state physics)ChemistryAnalytical chemistryScatteringQuantum wellQuantum oscillationsCondensed matter physicsFilling factor

摘要: The line shape of cyclotron resonance (CR) absorption is investigated for a two-dimensional electron gas (2DEG) in modulation-doped GaInAs/AlInAs narrow SQW structures. CR measured as functions far infrared (FIR) frequency, temperature, and carrier concentration. At low temperature short FIR wavelengths, well-defined filling-factor-dependent quantum oscillation structure obtained samples with high 2DEG concentrations, exhibiting clear maxima minima phase change point at the top peak. modulated scattering attributed to short-range scatterers originating mainly from alloy scattering. A part contribution comes ionized impurity analysis dependence width Hall mobility gives additional support this argument. An effective mass 0.063mo In0.53 Ga0.47As observed due non-parabolicity effect. La (R.C.) d'un gaz bidimensionel d'electrons (2DEG), confines dans des puits quantiques ctroits obtenus structures gainas/alinas modulation de dopage, est etudite. La r.c. Est mesuree en fonction la frequence d'excitation l'l.R. Lointain, et densite porteurs. Pour les plus courtes longueurs d'onde oscillations I'intensite d'absorption sont clairement mises evidence basse temperature. L'etude forme R.C. une gamme etendue temperatures d'energies ainsi que comparaison avec resultats mesures hall permettent d'analyser diffusion porteurs ce systeme. Cette attribuee pour grande distribution potentiels diffuseurs, courte portee provenant du desordre d'alliage. Enfin, valeur elevke masse m* = 0.063mo, l'echantillon ayant forte concentration e un fort effet nonparabolicie.

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