Enhanced dielectric and ferroelectric properties of Pb1−3x/2Lax(Zr0.5Ti0.5)O3 thin films with low lanthanum substitution

作者: SQ Zhang , WL Li , LD Wang , N Li , WD Fei

DOI: 10.1016/J.APSUSC.2010.11.168

关键词: LanthanumDielectricNuclear magnetic resonanceFerroelectricityTetragonal crystal systemCoercivityCeramicThin filmSol-gelMaterials scienceAnalytical chemistry

摘要: Abstract Effects of lanthanum (La) substitution (0.003 ≤ x ≤ 0.015) on the dielectric and ferroelectric properties Pb(Zr0.5Ti0.5)O3 thin films have been investigated. The were synthesized Pt (1 1 1)/Ti/SiO2/Si (1 0 0) substrates by a sol–gel method. Large constants are obtained within range 800–1600 which almost comparable to those observed in bulk ceramics. also show improved remnant polarization values reduced coercive field with increasing addition La substitution. Our results suggest that low contributes enhance film electric due improvement non-180° domain wall mobility as well stabilization tetragonal phase.

参考文章(36)
S. Trolier-Mckinstry, J. F. Shepard Jr, J. L. Lacey, T. Su, G. Zavala, J. Fendler, Piezoelectricity in ferroelectric thin films: Domain and stress issues Ferroelectrics. ,vol. 206, pp. 381- 392 ,(1998) , 10.1080/00150199808009171
Zhen Zhang, Ping Wu, Khuong P. Ong, Li Lu, Chang Shu, Electronic properties of A-site substituted lead zirconate titanate: Density functional calculations Physical Review B. ,vol. 76, pp. 125102- ,(2007) , 10.1103/PHYSREVB.76.125102
H.L. Cai, X.S. Wu, J. Gao, Effect of oxygen content on structural and transport properties in SrTiO3−x thin films Chemical Physics Letters. ,vol. 467, pp. 313- 317 ,(2009) , 10.1016/J.CPLETT.2008.11.071
Gene H. Haertling, PLZT electrooptic materials and applications: a review Ferroelectrics. ,vol. 75, pp. 25- 55 ,(1987) , 10.1080/00150198708008208
Keisuke Sato, Masatoshi Ishii, Kazuaki Kurihara, Masao Kondo, Crystal orientation dependence of the electro-optic effect in epitaxial lanthanum-modified lead zirconate titanate films Applied Physics Letters. ,vol. 87, pp. 251927- ,(2005) , 10.1063/1.2147722
M. Shimizu, H. Fujisawa, T. Shiosaki, MOCVD of ferroelectric PLZT thin films and their properties Microelectronic Engineering. ,vol. 29, pp. 173- 176 ,(1995) , 10.1016/0167-9317(95)00138-7
K P Rema, A S Divya, V Kumar, Influence of low lanthanum doping on the electrical characteristics of PZT(53/47) Journal of Physics D. ,vol. 42, pp. 075420- ,(2009) , 10.1088/0022-3727/42/7/075420
Su-Min Ha, Woo Sik Kim, Hyung-Ho Park, Tae Song Kim, Formation and Characterization of Self-Patterned PZT Film for Applying to Micro-Mechanical Detecting System Ferroelectrics. ,vol. 273, pp. 351- 357 ,(2002) , 10.1080/713716372
D. Dimos, W. L. Warren, M. B. Sinclair, B. A. Tuttle, R. W. Schwartz, Photoinduced hysteresis changes and optical storage in (Pb,La)(Zr,Ti)O3 thin films and ceramics Journal of Applied Physics. ,vol. 76, pp. 4305- 4315 ,(1994) , 10.1063/1.357316
Xunhu Dai, Z. Xu, Jie‐Fang Li, Dwight Viehland, Field‐induced strains and polarization switching mechanisms in La‐modified lead zirconate titanate ceramics Journal of Applied Physics. ,vol. 79, pp. 2023- 2028 ,(1996) , 10.1063/1.361056