AlN thin films with controlled crystallographic orientations and their microstructure

摘要: C‐axis oriented AlN thin films, or 〈001〉, are normally obtained by various reactive deposition methods. We have found the films with orientations other than 〈001〉 can be prepared controlling rf sputter conditions. Three different orientations, 〈102〉, and 〈101〉, were independently grown verified x‐ray diffraction. A factor growth habit is discussed. cross‐sectional transmission electron microscopy/scanning microscopy technique microdiffraction was used to study microstructure of film. It that film in a columnar structure individual grains single crystalline.