Vertical transistor device structure with cylindrically-shaped regions

作者： Kuo-Chang Robert Yang , Lin Zhu , Kamal Raj Varadarajan , Wayne Byran Grabowski , Sorin Stefan Georgescu

DOI:

关键词: Transistor 、 Conductivity 、 Materials science 、 Dielectric 、 Optics 、 Power semiconductor device 、 Optoelectronics 、 Layer (electronics) 、 Semiconductor 、 Vertical direction 、 Electrical conductor

摘要: A vertical power transistor device includes a semiconductor layer of first conductivity type, with plurality cylindrically-shaped dielectric regions disposed in the layer. The extend direction from top surface downward. Adjacent ones being laterally separated along common diametrical axis by narrow region having width. Each has cylindrically-shaped, conductive field plate member centrally therein. extends downward to near bottom region. separates source is at surface, and drain bottom,