Probing local coordination environments in high-k materials for gate stack applications
作者： D. W. McComb , A. J. Craven , D. A. Hamilton , M. MacKenzie
DOI: 10.1063/1.1758303
关键词: Excitation 、 Spectroscopy 、 Dielectric 、 Optoelectronics 、 High-κ dielectric 、 Materials science 、 Electronic band structure 、 Spectral line 、 Electronic structure 、 Amorphous solid 、 Analytical chemistry 、 Physics and Astronomy (miscellaneous)
摘要: Using electron energy-loss spectroscopy, the oxygen K-edge excitation in a range of crystalline standards relevant to candidate high-k materials has been examined. The spectra have modeled using electronic structure calculations order understand influence local coordination environment on data. knowledge obtained is used probe atomic thin amorphous films “HfSiO.”
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sci-hub.se 参考文章(10)
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