作者: R. Atanasov , A. Haché , J. L. P. Hughes , H. M. van Driel , J. E. Sipe
DOI: 10.1103/PHYSREVLETT.76.1703
关键词: Optoelectronics 、 Photocurrent 、 Coherent spectroscopy 、 Semiconductor 、 Condensed matter physics 、 Absorption (electromagnetic radiation) 、 Materials science 、 Coherent control 、 Relative phase 、 Electrical current
摘要: We show theoretically that interband transitions in a bulk semiconductor via coherent one- and two-photon absorption leads to the formation of an electrical current whose direction is controlled by relative phase beams. The phenomenon can occur centrosymmetric noncentrosymmetric materials; easily measurable currents are predicted for GaAs under realistic experimental conditions.