Built-in electric field in ZnO based semipolar quantum wells grown on (101¯2) ZnO substrates
作者： J. Brault , B. Damilano , M. Leroux , B. Vinter , J.-M. Chauveau
DOI: 10.1063/1.4851116
关键词: Molecular beam epitaxy 、 Luminescence 、 Stark effect 、 Materials science 、 Electric field 、 Wide-bandgap semiconductor 、 Optoelectronics 、 Condensed matter physics 、 Photoluminescence 、 Quantum-confined Stark effect 、 Quantum well
摘要: We report on the properties of semipolar (Zn,Mg)O/ZnO quantum wells homoepitaxially grown by molecular beam epitaxy (101¯2) R-plane ZnO substrates. demonstrate that atomically flat interfaces can be achieved with fully relaxed because mismatch between (Zn,Mg)O and is minimal for this growth orientation. The photoluminescence evidence a confined Stark effect an internal electric field estimated to 430 kV/cm 17% Mg content in barriers. well emission strongly polarized along [1¯21¯0] direction comparison bulk luminescence polarization points confinement.
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