Generation−recombination noise in AlxGa1-xAs : temperature dependence
作者： F Hofman , R J J Zijlstra , J M Bettencourt de Freitas , J C M Henning
DOI: 10.1088/0268-1242/5/10/005
关键词: Hall effect 、 Electrical resistivity and conductivity 、 Generation–recombination noise 、 Noise (radio) 、 Electron capture 、 Spectral line 、 Condensed matter physics 、 Chemistry 、 Nuclear magnetic resonance 、 Atmospheric temperature range 、 Electron
摘要: Voltage noise in Si-doped AlxGa1-xAs epilayers was investigated the frequency range of 1 Hz to 100 kHz and temperature 80-340 K. In addition, Hall mobility resistivity were measured as a function same range. The spectra consisted frequency- current-independent part current-dependent part. frequency-dependent one or two Lorentzians depended quadratically on applied current indicating that it caused by fluctuations. These therefore interpreted terms generation-recombination processes. Using model involving types localised centres forbidden gap including effect secondary valleys possible explain both characteristic times magnitudes various components functions with help computer calculations. From these calculations energy positions gap, electron capture cross sections information about concentrations could be obtained.
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