Ballistic-damage-induced size changes in equilibrium and under-pressurized Xe precipitates in amorphous silica

摘要: Abstract This work explores the behaviour of xenon precipitates in amorphous silica using a transmission electron microscope with in-situ ion implantation. The specimens were first implanted at high-temperature to form equilibrium Xe which then cooled room temperature under-pressurized precipitates. In-situ implantation and real-time monitoring high used study precipitates, respectively. revealed that grow under conditions until saturation is reached. Subsequent precipitate growth conditions, contain mixture equilibrium, possibly over-pressurized addition voids. Unlike (873 K), formed after cooling specimen 873 K temperature, considerably shrank when subjected further shrinkage continued new state defined by density was achieved. We discuss terms ballistic thermal spike initiates diffusion from matrix into convective flow glass towards voids causing their temperature.