KINETICS OF INTERACTION OF TANTALUM DISILICIDE WITH TANTALUM AND OTHER METALS.

作者: M. Kolodney , R. A. Graff , L. J. Schwartz

DOI: 10.1007/BF02913371

关键词: SiliconAtmospheric temperature rangeTitanium alloyTetragonal crystal systemCrystal growthTantalumMetallurgyIsothermal processMaterials scienceDiffusionAnalytical chemistry

摘要: The rate of growth Ta5Si3 in the Ta−TaSi2 system has been measured with good accuracy temperature range 1150° to 1370°C (2100° 2500°F) using couples consisting dense wafers components. isothermal is shown be parabolic and dependence constant given byk=5 exp (−77,000/RT) It that tantalum diffusion negligible by comparison silicon diffusion. was found exist both tetragonal hexagonal forms. A more limited investigation loss from TaSi2 W, Mo, Nb, Zr, Ti, Re indicates none these superior limiting degradation disilicide. In most instances a layer composition M5Si3 forms on metal side couple.

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