Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green’s Function Formalism

摘要: A new deterministic approach to the electronic noise calculation based on non-equilibrium Green’s function formalism with electron-phonon scattering mechanisms is presented for nanoscale devices, and diffusion phenomena at zero frequency are investigated. Our can handle quantum effects naturally it gives physical insight about in devices. As an application, silicon nanowire field effect transistor considered numerical results show that Johnson-Nyquist theorem satisfied equilibrium excess occurs presence of current transport.