Ionization Rates for Holes and Electrons in Silicon

作者: S. L. Miller

DOI: 10.1103/PHYSREV.105.1246

关键词: Charge carrierSiliconSecondary electronsTunnel ionizationIonizationElectron ionizationElectronAtomic physicsMaterials scienceGeneral Physics and Astronomy

摘要:

参考文章(6)
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