Band gap widening and narrowing in moderately and heavily doped n-ZnO films
作者： Anubha Jain , P. Sagar , R.M. Mehra
DOI: 10.1016/J.SSE.2006.07.001
关键词: Kondo insulator 、 Doping 、 Semiconductor 、 Semimetal 、 Band gap 、 Yttrium 、 Condensed matter physics 、 Dopant 、 Direct and indirect band gaps 、 Mineralogy 、 Materials science
摘要: … widening of the optical band gap occurs because the lower states in the conduction band are blocked. At the same time band gap … of widening and narrowing of optical band gap in sol–…
harvard.edu
elsevier.com
sci-hub.se 参考文章(25)
Hideaki Agura, Akio Suzuki, Tatsuhiko Matsushita, Takanori Aoki, Masahiro Okuda, Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition Thin Solid Films. ,vol. 445, pp. 263- 267 ,(2003) , 10.1016/S0040-6090(03)01158-1
S.C. Jain, D.J. Roulston, A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers Solid-State Electronics. ,vol. 34, pp. 453- 465 ,(1991) , 10.1016/0038-1101(91)90149-S
Takayuki Negami, Yasuhiro Hashimoto, Shiro Nishiwaki, Cu(In,Ga)Se2 thin-film solar cells with an efficiency of 18% Solar Energy Materials and Solar Cells. ,vol. 67, pp. 331- 335 ,(2001) , 10.1016/S0927-0248(00)00300-7
B. E. Sernelius, K.-F. Berggren, Z.-C. Jin, I. Hamberg, C. G. Granqvist, Band-gap tailoring of ZnO by means of heavy Al doping Physical Review B. ,vol. 37, pp. 10244- 10248 ,(1988) , 10.1103/PHYSREVB.37.10244
Tadatsugu Minami, Hidehito Nanto, Shinzo Takata, Optical Properties of Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering Japanese Journal of Applied Physics. ,vol. 24, pp. L605- L607 ,(1985) , 10.1143/JJAP.24.L605
Parmod Sagar, Manoj Kumar, R.M. Mehra, Influence of hydrogen incorporation in sol-gel derived aluminum doped ZnO thin films Thin Solid Films. ,vol. 489, pp. 94- 98 ,(2005) , 10.1016/J.TSF.2005.05.009
Ravinder Kaur, A. V. Singh, R. M. Mehra, Structural, electrical and optical properties of sol–gel derived yttrium doped ZnO films Physica Status Solidi (a). ,vol. 202, pp. 1053- 1059 ,(2005) , 10.1002/PSSA.200420006
A.E. Jiménez-González, Jose A. Soto Urueta, R. Suárez-Parra, Optical and electrical characteristics of aluminum-doped ZnO thin films prepared by solgel technique Journal of Crystal Growth. ,vol. 192, pp. 430- 438 ,(1998) , 10.1016/S0022-0248(98)00422-9
Bo E. Sernelius, Self-energy shifts in heavily doped, polar semiconductors Physical Review B. ,vol. 36, pp. 4878- 4887 ,(1987) , 10.1103/PHYSREVB.36.4878
A. V. Singh, R. M. Mehra, A. Yoshida, A. Wakahara, Doping mechanism in aluminum doped zinc oxide films Journal of Applied Physics. ,vol. 95, pp. 3640- 3643 ,(2004) , 10.1063/1.1667259