Optical channel waveguides in AlGaAs multiple-quantum-well structures formed by focused ion-beam-induced compositional mixing
作者： M. Kumar , V. Gupta , G.N. DeBrabander , P. Chen , I.T. Boyd
DOI: 10.1109/68.212691
关键词: Materials science 、 Microprobe 、 Gallium arsenide 、 Raman spectroscopy 、 Optoelectronics 、 Ion implantation 、 Mixing (physics) 、 Optics 、 Waveguide (optics) 、 Focused ion beam 、 Spectral line
摘要: Optical channel waveguiding in a AlGaAs multiple-quantum-well structure was demonstrated formed by compositional mixing induced focused ion beam (FIB) implantation. Selective achieved FIB implanting Si/sup ++/ with dose of 5*10/sup 14/ cm/sup -2/ followed rapid thermal annealing at 950 degrees C for 10 s. Raman microprobe spectra were used to characterize the lateral variation mixing. Channel waveguide loss 17.2 dB/cm measured, compared 10-12 measured planar waveguiding. Mode field pattern measurements indicate that change effective index 2.7*10/sup -4/ induced, corresponding an approximate depth 270 nm. >
harvard.edu
sci-hub.se 参考文章(18)
Koji Ishida, Kazunori Matsui, Toshiaki Fukunaga, Junji Kobayashi, Tetsuo Morita, Eizo Miyauchi, Hisao Nakashima, Scan speed effects on enhanced disordering of GaAs‐AlGaAs superlattices by focused Si ion beam implantation Applied Physics Letters. ,vol. 51, pp. 109- 111 ,(1987) , 10.1063/1.98639
T. Tang, P. Swanson, C. Herzinger, L. M. Miller, T. M. Cockerill, R. P. Bryan, T. A. DeTemple, J. J. Coleman, S‐bend loss in disorder‐delineated GaAs heterostructure laser waveguides with native and blue shifted active regions Applied Physics Letters. ,vol. 57, pp. 741- 743 ,(1990) , 10.1063/1.103431
M. C. Wu, M. M. Boenke, S. Wang, W. M. Clark, E. H. Stevens, M. W. Utlaut, GaAs/GaAlAs distributed Bragg reflector laser with a focused ion beam, low dose dopant implanted grating Applied Physics Letters. ,vol. 53, pp. 265- 267 ,(1988) , 10.1063/1.100142
F. Julien, P. D. Swanson, M. A. Emanuel, D. G. Deppe, T. A. DeTemple, J. J. Coleman, N. Holonyak, Impurity‐induced disorder‐delineated optical waveguides in GaAs‐AlGaAs superlattices Applied Physics Letters. ,vol. 50, pp. 866- 868 ,(1987) , 10.1063/1.98015
Koji Ishida, Takeshi Takamori, Kazunori Matsui, Toshiaki Fukunaga, Tetsuo Morita, Eizo Miyauchi, Hisao Hashimoto, Hisao Nakashima, Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation Japanese Journal of Applied Physics. ,vol. 25, pp. L783- L785 ,(1986) , 10.1143/JJAP.25.L783
T. Wolf, C.‐L. Shieh, R. Engelmann, K. Alavi, J. Mantz, Lateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity‐induced disordering Applied Physics Letters. ,vol. 55, pp. 1412- 1414 ,(1989) , 10.1063/1.101610
Yasuhiro Suzuki, Hidetoshi Iwamura, Takeo Miyazawa, Osamu Mikami, Polarization mode selective channel waveguides in an InGaAs/InP disordered superlattice Applied Physics Letters. ,vol. 57, pp. 2745- 2747 ,(1990) , 10.1063/1.103774
A. G. Choo, V. Gupta, H. E. Jackson, J. T. Boyd, A. J. Steckl, P. Chen, B. L. Weiss, R. D. Burnham, Raman Characterization of AlGaAs Superlattice Channel Waveguide Structure formed by CIB and FIB Implantation MRS Proceedings. ,vol. 240, pp. 691- ,(1991) , 10.1557/PROC-240-691
Koji Ishida, Eizo Miyauchi, Tetsuo Morita, Takeshi Takamori, Toshiaki Fukunaga, Hisao Hashimoto, Hisao Nakashima, Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused Si Ion Beam Implantation Japanese Journal of Applied Physics. ,vol. 26, pp. L285- L287 ,(1987) , 10.1143/JJAP.26.L285
N.William Parker, William P. Robinson, Joseph M. Snyder, The Nanofab-150-A Versatile New Focused-Ion-Beam System Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V. ,vol. 0632, pp. 76- 84 ,(1986) , 10.1117/12.963671