Changes in the porous silicon structure induced by laser radiation
作者： Walter Jaimes Salcedo , Francisco J. Ramirez Fernandez , Joel C. Rubim
DOI: 10.1002/JRS.668
关键词: Band gap 、 Raman spectroscopy 、 Photoluminescence 、 Analytical chemistry 、 Porous silicon 、 Crystallite 、 Molecular physics 、 Materials science 、 Quantum dot 、 Laser 、 Phonon
摘要: Porous silicon (PS) films were investigated by Raman, and photoluminescence spectroscopies using different laser excitations at 488.0, 514.5, 632.8, 782.0 nm. The exposure of PS layers to high powers causes an increase in the 480 cm−1 Raman intensity a shift enhancement PL emission. A laser-assisted surface reaction is proposed explain these observations. analysis first- second-order spectra showed that band gaps are indirect as bulk c-Si. phonon also spectral distribution linear polarization degree (LPD) shown be dependent on excitation energy. This dependence cannot explained within quantum confinement model. mechanism for emission presented which radioactive recombination electron–hole pairs occurs localized centres (the Si—O—SiR moieties) pore/crystallite interface. These quasi-molecular Jahn–Teller active, i.e. phonon-assisted phenomenon. Copyright © 2001 John Wiley & Sons, Ltd.
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