Quantum conductivity corrections in free-standing and supported n+-GaAs wires
作者： A Potts , D G Hasko , J R A Cleaver , C G Smith , H Ahmed
DOI: 10.1088/0953-8984/2/7/011
关键词: Phonon 、 Electrical resistivity and conductivity 、 Coherence length 、 Atmospheric temperature range 、 Magnetoresistance 、 Conductivity 、 Condensed matter physics 、 Chemistry 、 Doping 、 Electron localization function
摘要: Low-temperature electrical and magnetoresistance measurements have been performed on free-standing supported wires of n-type GaAs doped to 1017 cm-3 over the temperature range 0.47-4.2 K. These were triangular in cross-section, with widths 600-900 nm lengths 3.2-10 mu m. The authors report that observed increase resistance for temperatures below 4.2 K can be interpreted as being due a combination weak localisation 3D electron-electron interaction effects. They also show how results described here used basis determination phonon conductivity dimensionality structures.
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