ZnO-coated Ga2O3 nanowires

作者: Hyoun Woo Kim , Seung Hyun Shim , Jong Woo Lee

DOI: 10.1117/12.779872

关键词: Materials scienceTransmission electron microscopyX-ray spectroscopySelected area diffractionAtomic layer depositionChemical engineeringX-ray crystallographyElectron diffractionCrystallographyNanowireScanning electron microscope

摘要: Ga 2 O 3 -core/ZnO-shell coaxial nanocables were fabricated via a two-step process. While core nanowires were synthesized by thermal heating of GaN powders, ZnO shell layers deposited on the using the atomic layer deposition method. The samples characterized scanning electron microscopy, X-ray diffraction (XRD), transmission microscopy (TEM), energy-dispersive X-ray spectroscopy (EDX), and photoluminescence (PL). XRD, lattice-resolved TEM, and selected area diffraction revealed that the coated comprised hexagonal phase. EDX analyses in good agreement with what can be expected for ZnO-coated nanowires. shape PL spectrum has been changed coating process, suggesting contribution from layers.

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