Chalcogenide Glasses Based on Germanium Disulfide for Second Harmonic Generation
作者： M. Guignard , V. Nazabal , F. Smektala , J.-L. Adam , O. Bohnke
关键词: Germanium disulfide 、 Materials science 、 Raman spectroscopy 、 Chalcogenide 、 Analytical chemistry 、 Cathode 、 Poling 、 Molecular physics 、 Anode 、 Second-harmonic generation 、 Glass Poling
摘要: High second-order susceptibilities are created by thermal poling in bulk germanium disulfide based chalcogenide glasses. Experimental conditions of the treatment (temperature, voltage, time) were optimized for each glass composition. The nonlinear signals recorded using Maker fringes experiment and a coefficient χ(2) up to 8 pm V-1 was measured Ge25Sb10S65 glass. This value is obtained simulation on accurate knowledge thickness layer. Two mechanisms proposed explain creation layer under anode: formation migration charged defects towards anode may mainly occur Ge20Ga5Sb10S65 Ge25Ga5S70 glasses, whereas Na+ ions cathode be responsible accumulation negative charges Ge33S67 Different electronic conductivity behaviors seem at origin phenomenon. In parallel, potential effect structural properties studied Raman spectroscopy secondary ion mass measurements.
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