Hot-electron magnetospectroscopy in resonant tunneling devices: A probe of conduction-band anisotropy

摘要: We report a series of magnetotransport measurements on two double barrier resonant tunneling devices based n‐GaAs/(AlGa)As. The central GaAs wells have widths 60 and 120 nm. Many well‐defined quantum resonances are observed in the conductance even at room temperature up to 70 liquid helium temperatures. existence these indicates that significant fraction conduction electrons travel ballistically over distances >0.3 μm. When magnetic field is applied plane well (B⊥J) takes places into distinct types states: traversing states which interact with both barriers skipping only emitter barrier. Rotation (100) parallel reveals anisotropy Γ band high electron energies.