Chemical Doping Effects in Multilayer MoS2 and Its Application in Complementary Inverter.

摘要: Multilayer MoS2 has been gaining interest as a new semiconducting material for flexible displays, memory devices, chemical/biosensors, and photodetectors. However, conventional multilayer devices have exhibited limited performances due to the Schottky barrier defects. Here, we demonstrate poly(diketopyrrolopyrrole-terthiophene) (PDPP3T) doping effects in MoS2, which results improved electrical characteristics (∼4.6× higher on-current compared baseline high current on/off ratio of 106). Synchrotron-based study using X-ray photoelectron spectroscopy grazing incidence wide-angle diffraction provides mechanisms that align edge-on crystallites (97.5%) PDPP3T well larger interaction with leads dipole charge transfer (at annealing temperature 300 °C), support observed enhancement characteristics. Furthermore, complementary metal-oxide-semiconductor inverter uses p-type MoSe2 PDPP3T-doped charging discharging channels, respectively.