Career Selective Si Solar Cells: Modelling and Performance Metrics Evaluation
作者： Amit Kumar Garg , Poonam Singhal , Rashmi Chawla
DOI: 10.1007/S42341-020-00281-1
关键词: Performance metric 、 Materials science 、 Oxide 、 Galvanic cell 、 Energy conversion efficiency 、 Silicon 、 Non-blocking I/O 、 Layer (electronics) 、 Optoelectronics 、 Solar cell
摘要: Silicon (Si) junctionless solar Photo Voltaic Cells (PVCs) with semiconducting carrier selective blocking layer can modify output efficiency of cell. In this research work, we have proposed use both electron–hole in Si cell SILVACO simulation. This paper simulates and evaluates two possible electron-selective oxides (TiO2 ZnO) hole-selective (CuAlO2 NiO). The results terms performance metric is compared further TiO2 NiO as layers are proposed. simulation suggest the fermi level pinning on device a reason for increase efficiency. work comprehends considerable understanding to band-engineer contact oxide device. parameters Jsc = 10.08 mA/cm2, Voc = 2.69 V, fill factor (FF) = 99.8% conversion 27.09% (1 sun) obtained under AM1.5G illumination.
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