InP thin films with single-crystalline-like properties on flexible metal substrates for photovoltaic application
作者： Pavel Dutta , Monika Rathi , Ying Gao , Yao Yao , Devendra Khatiwada
DOI: 10.1109/PVSC.2016.7749950
关键词: Band gap 、 Ion beam-assisted deposition 、 Thin film 、 Chemical vapor deposition 、 Texture (crystalline) 、 Metalorganic vapour phase epitaxy 、 Electron mobility 、 Optoelectronics 、 Epitaxy 、 Materials science
摘要: We demonstrate heteroepitaxial growth of single-crystalline-like InP thin films by metal organic chemical vapor deposition (MOCVD) on low-cost flexible foils. The epitaxy was enabled a multilayer oxide buffer made using ion beam assisted (IBAD). were biaxially textured with sharp in-plane texture and exhibited strong (002) preferential out-of-plane orientation. Strong room-temperature photoluminescence also observed band gap ∼ 1.27 eV. Electron mobility > 700 cm2/V-s at carrier concentration 5 × 1017 cm−3 obtained. High quality single crystalline-like substrates may potentially be used in the fabrication inexpensive solar cells.
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