Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

作者: Yoshihiko Takano , Masanori Nagao , Isao Sakaguchi , Minoru Tachiki , Takeshi Hatano

DOI: 10.1063/1.1802389

关键词: Chemical vapor depositionThermal conductivityBoronDiamondLiquid heliumSuperconductivitySemiconductorCondensed matter physicsMaterials scienceThin film

摘要: Diamond has always been adored as a jewel. Even more fascinating is its outstanding physical properties; it the hardest material known in world with highest thermal conductivity. Meanwhile, when we turn to electrical properties, diamond rather featureless insulator. However, boron doping, becomes p-type semiconductor, acting charge acceptor. Therefore recent news of superconductivity heavily boron-doped synthesized by high pressure sintering was received considerable surprise. Opening up new possibilities for diamond-based devices, systematic investigation these phenomena clearly needs be achieved. Here show unambiguous evidence thin film deposited chemical vapor deposition (CVD) method. Furthermore onset superconducting transition found 7.4K, which higher than reported value ref(7) and well above helium liquid temperature. This finding establishes universal property diamond, demonstrating that device application indeed feasible challenge.

参考文章(13)
A T Collins, A W S Williams, The nature of the acceptor centre in semiconducting diamond Journal of Physics C: Solid State Physics. ,vol. 4, pp. 1789- 1800 ,(1971) , 10.1088/0022-3719/4/13/030
R. M. Chrenko, Boron, the Dominant Acceptor in Semiconducting Diamond Physical Review B. ,vol. 7, pp. 4560- 4567 ,(1973) , 10.1103/PHYSREVB.7.4560
Thin film diamond growth mechanisms. Comment Philosophical transactions - Royal Society. Mathematical, physical and engineering sciences. ,vol. 342, pp. 209- 224 ,(1993) , 10.1098/RSTA.1993.0015
H. Umezawa, H. Taniuchi, H. Ishizaka, T. Arima, N. Fujihara, M. Tachiki, H. Kawarada, RF performance of diamond MISFETs IEEE Electron Device Letters. ,vol. 23, pp. 121- 123 ,(2002) , 10.1109/55.988811
Yu.V. Pelskov, A.Ya. Sakharova, M.D. Krotova, L.L. Bouilov, B.V. Spitsyn, Photoelectrochemical properties of semiconductor diamond Journal of Electroanalytical Chemistry. ,vol. 228, pp. 19- 27 ,(1987) , 10.1016/0022-0728(87)80093-1
Greg M. Swain, Rajeshuni. Ramesham, The electrochemical activity of boron-doped polycrystalline diamond thin film electrodes Analytical Chemistry. ,vol. 65, pp. 345- 351 ,(1993) , 10.1021/AC00052A007
E. A. Ekimov, V. A. Sidorov, E. D. Bauer, N. N. Mel'nik, N. J. Curro, J. D. Thompson, S. M. Stishov, Superconductivity in diamond Nature. ,vol. 428, pp. 542- 545 ,(2004) , 10.1038/NATURE02449
B.V. Spitsyn, L.L. Bouilov, B.V. Derjaguin, Vapor growth of diamond on diamond and other surfaces Journal of Crystal Growth. ,vol. 52, pp. 219- 226 ,(1981) , 10.1016/0022-0248(81)90197-4
Mutsukazu Kamo, Yoichiro Sato, Seiichiro Matsumoto, Nobuo Setaka, Diamond synthesis from gas phase in microwave plasma Journal of Crystal Growth. ,vol. 62, pp. 642- 644 ,(1983) , 10.1016/0022-0248(83)90411-6
Koichi Ushizawa, Kenji Watanabe, Toshihiro Ando, Isao Sakaguchi, Mikka Nishitani-Gamo, Yoichiro Sato, Hisao Kanda, Boron concentration dependence of Raman spectra on {100} and {111} facets of B-doped CVD diamond Diamond and Related Materials. ,vol. 7, pp. 1719- 1722 ,(1998) , 10.1016/S0925-9635(98)00296-9