作者: Tom Feng , Amal K. Ghosh , Charles Fishman
DOI: 10.1063/1.91095
关键词: Polycrystalline silicon 、 Materials science 、 Surface coating 、 Analytical chemistry 、 Silicon 、 Inorganic chemistry 、 Solar energy 、 Silicon dioxide 、 Tin oxide 、 Electrical resistivity and conductivity 、 Deposition (law) 、 Physics and Astronomy (miscellaneous)
摘要: SnO2/n‐Si solar cells (area=1 and 4 cm2) having AM1 efficiencies of 12.3% on single‐crystal silicon 10.1% polycrystalline have been fabricated. The tin oxide is deposited by spraying a SnCl4 mixture onto heated substrates. Using this low‐cost process, large‐area (20‐cm2) 10% efficiency also made. smaller diffusion length higher resistivity in the (Wacker) accounts for its lower as compared to cells.