Heterojunction bipolar transistors using Si-Ge alloys
作者： S.S. Iyer , G.L. Patton , J.M.C. Stork , B.S. Meyerson , D.L. Harame
DOI: 10.1109/16.40887
关键词: Bipolar junction transistor 、 Band gap 、 Optoelectronics 、 Heterojunction bipolar transistor 、 Silicon 、 Heterojunction 、 Molecular beam epitaxy 、 Materials science 、 Chemical vapor deposition 、 Epitaxy
摘要: Advanced epitaxial growth techniques permit the use of pseudomorphic Si/sub 1-x/Ge/sub x/alloys in silicon technology. The smaller bandgap of these alloys allows for a variety of …
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