作者: Stanislav Ivanovich Soloviev , Zachary Matthew Stum , Greg Thomas Dunne , Jesse Berkley Tucker
DOI:
关键词: Chemical engineering 、 Heat treating 、 Analytical chemistry 、 Impurity 、 Dopant 、 Materials science 、 Layer (electronics) 、 Doping 、 Carbonization
摘要: A method for doping impurities into a device layer is provided. The includes providing carbonized dopant over layer, wherein the comprises one or more impurities, and heat treating to thermally diffuse layer.