Device and method for image sensing
作者： Jiafu Luo , Richard A Mann , Selim S Bencuya
DOI:
关键词: Reset (computing) 、 Transistor 、 Electrical engineering 、 Photodetector 、 Sense (electronics) 、 Node (circuits) 、 Transfer (computing) 、 Image sensing 、 Pixel 、 Engineering
摘要: The present invention relates to devices and methods for image sensing. In one aspect, the a device including plurality of pixels (132, 134, 136, 138), wherein each pixel includes charge transfer (112, 114, 116, 118) photodetector (122, 124, 126, 128), has itch about 3 micron or less. This aspect further select transistor (110), reset (106), source follower (108), sense node (120), (120) are shared by 138).
lens.org 参考文章(29)
Nang T. Tran, Donald J. Sauer, Pixel array with high and low resolution mode ,(1997)
Robert M. Guidash, Active pixel image sensor with shared amplifier read-out ,(2000)
Robert M. Guidash, Photodiode active pixel sensor with shared reset signal row select ,(1998)
Hoon-Sang Oh, Jin-Su Han, Unit pixel of CMOS image sensor with capacitor coupled photodiode ,(2000)
Robert M. Guidash, Three transistor active pixel sensor architecture with correlated double sampling ,(1999)
Eric Charles Fox, Five transistor CMOS pixel ,(2003)
Eric R. Fossum, Scott Patrick Campbell, Shared photodetector pixel image sensor ,(2003)
Tzu-Chiang Hsieh, Photoconductor on active pixel image sensor ,(2003)
Robert M. Guidash, CMOS image sensor with extended dynamic range ,(2002)
Bryan David Ackland, David Andrew Inglis, Alexander George Dickinson, Combined photogate and photodiode active pixel image sensor ,(1995)