Silicon residue removal in nanosheet transistors
作者： Muthumanickam Sankarapandian , Zhenxing Bi , Jingyun Zhang , Nicolas J. Loubet , Thamarai S. Devarajan
DOI:
关键词: Stack (abstract data type) 、 Semiconductor device 、 Optoelectronics 、 Nanosheet 、 Gas phase 、 Silicon 、 Etching (microfabrication) 、 Transistor 、 Materials science 、 Adjacent channel
摘要: A method for forming a nanosheet semiconductor device includes stack comprising channel nanosheets. The depositing silicon on the stack, completely filling space between adjacent etching silicon. exposing to gas phase heat treatment.
lens.org 参考文章(15)
Jingchun Zhang, Anchuan Wang, Nitin K. Ingle, Selective etch for silicon films ,(2011)
Fan-yi Hsu, Sheng-Hsiung Wang, Yu-Lien Huang, Chun-Liang Tai, Chia-Pin Lin, Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure ,(2011)
David T. Or, Xinliang Lu, Zhenbin Ge, Chien-Teh Kao, Mei Chang, Haichun Yang, Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects ,(2008)
Ali Khakifirooz, Bruce B. Doris, Pouya Hashemi, Kangguo Cheng, Alexander Reznicek, Gate-all-around nanowire MOSFET and method of formation ,(2015)
Bayu Thedjoisworo, Jack Kuo, Joon Park, David Cheung, Polysilicon etch with high selectivity ,(2013)
Vijay Narayanan, Takashi Ando, Changhwan Choi, Kisik Choi, Low threshold voltage cmos device ,(2011)
Bruce B. Doris, Huilong Zhu, Methods for manufacturing a finfet using a conventional wafer and apparatus manufactured therefrom ,(2004)
Ali Khakifirooz, Alexander Reznicek, Bruce B. Doris, Kangguo Cheng, Finfet structures having silicon germanium and silicon fins ,(2015)
Alexandra Abbadie, Pascal Besson, Marie-Noëlle Semeria, Method of wet cleaning a surface, especially of a material of the silicon-germanium type ,(2004)
Mark Rodder, Manoj Mehrotra, Gary Widder, High yield and high speed CMOS process ,(2002)