Research on quantum efficiency of reflection-mode GaAs photocathode with thin emission layer
作者： Xinlong Chen , Yijun Zhang , Benkang Chang , Jing Zhao , Muchun Jin
DOI: 10.1016/J.OPTCOM.2012.09.030
关键词: Photocathode 、 Reflection (mathematics) 、 Optoelectronics 、 Quantum efficiency 、 Recombination velocity 、 Materials science 、 Electron 、 Optics 、 Mode (statistics) 、 Layer (electronics)
摘要: Abstract The conventional quantum efficiency formula for the reflection-mode GaAs photocathode is not applicable to with a thin emission layer. revised has been solved from one-dimension continuity equations, in which electrons generated GaAlAs buffer layer are considered. According formula, we analyze impact of some relational performance parameters on efficiency, such as thickness layer, interface recombination velocity etc. Besides, use and fit experimental curves two photocathodes have different-thickness layers respectively. results show that compared more suitable photcathode takes part photoemission.
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